JPH0467793B2 - - Google Patents

Info

Publication number
JPH0467793B2
JPH0467793B2 JP61170615A JP17061586A JPH0467793B2 JP H0467793 B2 JPH0467793 B2 JP H0467793B2 JP 61170615 A JP61170615 A JP 61170615A JP 17061586 A JP17061586 A JP 17061586A JP H0467793 B2 JPH0467793 B2 JP H0467793B2
Authority
JP
Japan
Prior art keywords
hall element
active region
substrate
ferrite
mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61170615A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6327074A (ja
Inventor
Yasuhiko Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP61170615A priority Critical patent/JPS6327074A/ja
Publication of JPS6327074A publication Critical patent/JPS6327074A/ja
Publication of JPH0467793B2 publication Critical patent/JPH0467793B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Hall/Mr Elements (AREA)
JP61170615A 1986-07-18 1986-07-18 ホール素子の製造方法 Granted JPS6327074A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61170615A JPS6327074A (ja) 1986-07-18 1986-07-18 ホール素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61170615A JPS6327074A (ja) 1986-07-18 1986-07-18 ホール素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6327074A JPS6327074A (ja) 1988-02-04
JPH0467793B2 true JPH0467793B2 (en]) 1992-10-29

Family

ID=15908146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61170615A Granted JPS6327074A (ja) 1986-07-18 1986-07-18 ホール素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6327074A (en])

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997909A (en) * 1975-05-14 1976-12-14 International Business Machines Corporation High carrier velocity magnetic sensor
US4188605A (en) * 1978-07-21 1980-02-12 Stout Glenn M Encapsulated Hall effect device
JPS55117294A (en) * 1979-02-28 1980-09-09 Tdk Corp Hall effect device

Also Published As

Publication number Publication date
JPS6327074A (ja) 1988-02-04

Similar Documents

Publication Publication Date Title
JPH0783050B2 (ja) 半導体素子の製造方法
JPH0467793B2 (en])
CN111384154A (zh) 抗辐照双极器件
JPH0467794B2 (en])
JPH0311897Y2 (en])
JPS6327075A (ja) ホール素子
JPH0580157B2 (en])
JPS6281759A (ja) ヘテロ接合型バイポ−ラ・トランジスタ構造
JPH0564473B2 (en])
JP2506733B2 (ja) 半導体装置の製造方法
JPH02222549A (ja) 半導体装置の構造
JPS637033B2 (en])
JPS61174745A (ja) 半導体装置の製造方法
JP3340809B2 (ja) 縦型半導体素子及びその製造方法
JPH05175238A (ja) 接合型電界効果トランジスタ
JPH0573353B2 (en])
JPH0256938A (ja) 電界効果トランジスタ及びその製法
JPH0745973Y2 (ja) ホール素子装置
JPH03231424A (ja) 化合物半導体装置の製造方法
JPH04192362A (ja) 静電誘導型半導体装置の製造方法
JP2682032B2 (ja) 半導体装置の製造方法
JPH0346271A (ja) Ｍｉｓ形電界効果トランジスタ
JPH0618273B2 (ja) ショットキバリア半導体装置
JPH05308080A (ja) バイポ―ラトランジスタの製法
JPH01257371A (ja) 半導体装置の製造方法